Instrumentation and Measurement Physics(DIMP)
Physique des instruments et mesures (DPIM)
Jose GARCIA
PTD Inc.
Photo-Carrier Radiometry of semiconductors: Instrumentation and ion-implantation studies
Non-contact, non-intrusive photo-carrier radiometry (PCR) was used for monitoring the ion implantation of (p-type) industrial-grade silicon wafers. The silicon wafers were implanted with different species (Boron, Phosphorus) in the dose range of 1x1011-to-1x1016 ions/cm2 at different implantation energies (10 keV-to-180 keV). The PCR 100 system from Photo-Thermal Diagnostics Inc, Toronto, Canada was used to perform the measurements, see Fig. 1. Various aspects of the instrumentation as well as quantitative results of the sensitivity to the implantation doses and energies and the physics of signal dependence on dose will be presented. This laser-based carrier-wave technique monitors harmonically photoexcited and recombining carriers and shows great potential advantages over existing methodologies for characterization of multiple semiconductor processes such as ion implantation and other Si wafer process steps.